Product Datasheet Search Results:
16 Pages, 738 KB, Original- NE3210S01-T1B
- Cel
- RF JFET Transistors Super Lo Noise HJFET
16 Pages, 54 KB, Original- NE3210S01-T1B
- Nec Electronics
- X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
18 Pages, 193 KB, Original- NE3210S01-T1B
- Renesas Electronics
- KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
Product Details Search Results:
Cel.com/NE3210S01-T1B
{"Factory Pack Quantity":"4000","Technology":"GaAs","Product Category":"RF JFET Transistors","Transistor Polarity":"N-Channel","Vgs - Gate-Source Breakdown Voltage":"- 3 V","Forward Transconductance - Min":"55 mS","Brand":"CEL","Id - Continuous Drain Current":"70 mA","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"165 mW","Packaging":"Reel","Frequency":"12 GHz","Vds - Drain-Source Breakdown Voltage":"4 V","Gain":"13.5 dB","Transistor Type":"HFET","Package / Case":"SO-1","NF - Noise Figure":"0.35 dB","M...
1567 Bytes - 08:01:17, 01 November 2024
Renesas.com/NE3210S01-T1B
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1650 W","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"12 dB","Drain Current-Max (ID)":"0.0150 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HETERO-JUNCTION","DS Breakdown Voltage-Min":"3 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","C...
1426 Bytes - 08:01:17, 01 November 2024
