NE3210S01-T1B KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
From Renesas Electronics
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 3 V |
| Drain Current-Max (ID) | 0.0150 A |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | KU BAND |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | UNSPECIFIED |
| Package Style | MICROWAVE |
| Power Dissipation Ambient-Max | 0.1650 W |
| Power Gain-Min (Gp) | 12 dB |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | UNSPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF SMALL SIGNAL |
