Product Datasheet Search Results:
4 Pages, 217 KB, Scan- RFM12N10
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A.
4 Pages, 229 KB, Scan- RFM12N10L
- General Electric Solid State
- N-channel logic level power field-effect transistor (LL FET). 100V, 12A.
5 Pages, 304 KB, Scan- RFM12N10
- Harris Semiconductor
- Power MOSFET Data Book 1990
4 Pages, 245 KB, Scan- RFM12N10L
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 44 KB, Original- RFM12N10
- Intersil Corporation
- 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs
1 Pages, 40 KB, Original- RFM12N10
- International Rectifier
- RF and BUZ Series Power MOSFETs - N-Channel
Product Details Search Results:
Zilog.com/IXFM12N100
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.05 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1462 Bytes - 14:56:44, 15 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXFM12N100.pdf | 0.56 | 1 | Request |
