Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"40(W)","Continuous Drain Current":"6.6(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"IPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"DPAK_369D\u221201","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"350pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"75","Supplier Device Package":"I-Pak","Datasheets":"IRFR/U9120N","Rds On (Max) @ Id, Vgs":"480 mOhm @ 3.9A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"40W","Package / Case":"TO-251-3 Long Leads, IPak, TO-251AB"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-251-3 Long Leads, IPak, TO-251AB","Current - Continuous Drain (Id) @ 25\u00b0C":"6.6A (Tc)","Gate Charge (Qg) @ Vgs":"27nC @ 10V","Product Photos":"DPAK_369D\u221201","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"480 mOhm @ 3.9A...