Product Datasheet Search Results:

AUIRFP064N.pdf11 Pages, 252 KB, Original
AUIRFP064N
Infineon Technologies Ag
Trans MOSFET N-CH Si 55V 110A Automotive 3-Pin(3+Tab) TO-247AC Tube
IRFP064NPBF.pdf9 Pages, 599 KB, Original
IRFP064NPBF
Infineon Technologies Ag
Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube
AUIRFP064N.pdf12 Pages, 264 KB, Original
AUIRFP064N
International Rectifier
MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms
IRFP064N.pdf9 Pages, 109 KB, Original
IRFP064N-201.pdf5 Pages, 266 KB, Scan
IRFP064N-201
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-201PBF.pdf5 Pages, 266 KB, Scan
IRFP064N-201PBF
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-202.pdf5 Pages, 266 KB, Scan
IRFP064N-202
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-202PBF.pdf5 Pages, 266 KB, Scan
IRFP064N-202PBF
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-203.pdf5 Pages, 266 KB, Scan
IRFP064N-203
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-203PBF.pdf5 Pages, 266 KB, Scan
IRFP064N-203PBF
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-204.pdf5 Pages, 266 KB, Scan
IRFP064N-204
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP064N-204PBF.pdf5 Pages, 266 KB, Scan
IRFP064N-204PBF
International Rectifier
110 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Infineon.com/AUIRFP064N
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"110(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1510 Bytes - 08:59:40, 21 September 2024
Infineon.com/IRFP064NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"110(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1507 Bytes - 08:59:40, 21 September 2024
Irf.com/AUIRFP064N
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-247AC Pkg","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"TO-247-3","Supplier Device Package":"TO-247AC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRFP064N","Rds On (Max) @ Id, Vgs":"8 mOhm @ 59A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Standard Package":...
1685 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-201
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1475 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-201PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...
1544 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-202
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1475 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-202PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...
1544 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-203
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1477 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-203PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...
1543 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-204
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1475 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-204PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N...
1543 Bytes - 08:59:40, 21 September 2024
Irf.com/IRFP064N-205
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"480 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"110 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1475 Bytes - 08:59:40, 21 September 2024

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