Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package / Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Ta)","Gate Charge (Qg) @ Vgs":"8.3nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"540 mOhm @ 600mA, 10V","Datasheets":"IRFD110","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"100","Drain to Source Voltage (Vdss)"...

{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"1 A","Width":"5 mm","Maximum Drain Source Voltage":"100 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.3 nC @ 10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"6.9 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"180 pF @ 25 V","Length":"6....