Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"38(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.1(W)","Continuous Drain Current":"38(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"40(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"40(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"38(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"38(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.1(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF5210S","Rds On (Max) @ Id, Vgs":"60 mOhm @ 38A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Ma...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"38A (Tc)","Gate Charge (Qg) @ Vgs":"230nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"60 mOhm @ 38A, 10V","Datasheets":"AUIRF5210S","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging":"...

{"Factory Pack Quantity":"800","Vds - Drain-Source Breakdown Voltage":"- 100 V","Transistor Polarity":"P-Channel","Rds On - Drain-Source Resistance":"60 mOhms","Brand":"International Rectifier","Id - Continuous Drain Current":"- 38 A","Mounting Style":"SMD/SMT","Packaging":"Reel","Product Category":"MOSFET","Qg - Gate Charge":"150 nC","Package / Case":"D-PAK-3","RoHS":"Details","Manufacturer":"International Rectifier"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"120 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Te...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"780 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"40 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"P-CHANNEL","FET Te...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"38A (Tc)","Gate Charge (Qg) @ Vgs":"230nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"D2PAK Additional Assembly Site 17/Dec/2013 Additional Assembly Site 19/Mar/2014 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers...