Product Datasheet Search Results:
4 Pages, 126 KB, Scan- IRF152
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 40 A, 60 V/100 V
4 Pages, 200 KB, Original- IRF152
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF152
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF152
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 192 KB, Scan- IRF152
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A.
2 Pages, 124 KB, Scan- IRF152
- General Electric
- Power Transistor Data Book 1985
5 Pages, 199 KB, Scan- IRF152
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 205 KB, Scan- IRF152R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 58 KB, Original- IRF152
- Intersil Corporation
- 33A and 40A, 60V and 100V, 0.055 and 0.08 ?, N-Channel Power MOSFETs
1 Pages, 36 KB, Original- IRF152
- International Rectifier
- N-Channel Power MOSFETs
6 Pages, 177 KB, Scan- IRF1520G
- International Rectifier
- 7.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
6 Pages, 177 KB, Scan- IRF1520GPBF
- International Rectifier
- 7.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/IRF1520G
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1451 Bytes - 23:18:36, 26 December 2024
Irf.com/IRF1520GPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"29 A","Channel Type":"N-CH...
1520 Bytes - 23:18:36, 26 December 2024
Various/IRF152R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"11","I(D) Abs. Max.(A) Drain Curr.":"20","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"80m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"132","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1295 Bytes - 23:18:36, 26 December 2024
