Product Datasheet Search Results:
10 Pages, 225 KB, Original- BSM35GD120DN2E3224
- Eupec Power Semiconductors
- IGBT Power Module
1 Pages, 52 KB, Original- BSM35GD120DN2E3224
- Infineon Technologies
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10 Pages, 265 KB, Original- BSM35GD120DN2E3224BOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 50A 280000mW 17-Pin ECONO2-2
Product Details Search Results:
Infineon.com/BSM35GD120DN2E3224
{"Gate-Emitter Leakage Current":"150 nA","Continuous Collector Current at 25 C":"50 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"280 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"1200 V","Packaging":"Bulk","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Package / Case":"EconoPACK 2","Collector-Emitter Saturation Voltage":"2.7 V","Configurati...
1639 Bytes - 14:23:41, 21 November 2024
Infineon.com/BSM35GD120DN2E3224BOSA1
{"Collector Current (DC) ":"50(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Package Type":"ECONO2-2","Configuration":"Hex","Pin Count":"17"}...
1480 Bytes - 14:23:41, 21 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM35GD120DN2E3224.pdf | 0.22 | 1 | Request |
