- BAS86T/R
- Nxp Semiconductors / Philips Semiconductors
- Schottky barrier diode - C<sub>d</sub> max.: 8@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 5000 A; I<sub>R</sub> max: 5@VR=40VA; V<sub>F</sub>max: 450@IF=10mA mV; V<sub>R</sub> max: 50 V