tions for extended periods may affect device reliability. es ZF ORDERING INFORMATION Z c Part Package Temperature Range E- eo s 2N3821 Hermetic TO-72 SSCto+175C = 5010 X2N3821 Sorted Chips in Carriers -55C to +175C -- 2N3822 - Hermetic TO-72 -55C to +175C X2N3822 Sorted Chips in Carriers -55C to +175C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise specified) 2N3821 2N3822 SYMBOL PARAMETER UNITS TEST CONDITIONS MIN MAX MIN MAX 0.1 O.1 nA Iess Gate Reverse Current Vas = -30V, Vos = 0 0.1 O41 pA Ta = 150C BVass Gate-Source Breakdown Voltage -50 -50 Iq = -1p4, Vos = 0 Vasiott) Gate-Source Cutoff Voltage 4 6 Vv Vos = 15V, Ip = 0.5nA 0.5 -2 Vos = 18V, Ip = SOA Ves Gate-Source Voltage | -4 Vos = 18V, Ip = 200HA Ipss Saturation Drain Current (Note 1) 0.5 2.5 2 10 mA | Vos = 15V, Vas = 0 3-52N3821 / 2N3822 CALOGIC CORP WG8E D MM 1L8443ee O000e91 5 MECGC CORPORATION a ELECTRICAL CHARACTERISTICS (Continued) (Ta = 25C unless otherwise specified) 3 a S 2N3821 2N3822 SYMBOL PARAMETER UNITS TEST CONDITIO
vice reliability. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise specified) ORDERING INFORMATION Part Package Temperature Range 2N3821 - Hermetic TO-72 -55C to +175C X2N3821 Sorted Chips in Carriers -55C to +175C 2N3822 Hermetic TO-72 -55C to +175C X2N3822 Sorted Chips in Carriers ~55C to +175C 2N3821 2N3822 SYMBOL PARAMETER UNITS TEST CONDITIONS MIN MAX MIN MAX 01 0.1 nA lass Gate Reverse Current Vas = -30V, Vos = 0 0.1 0.1 pA | Ta = 150C BVass Gate-Source Breakdown Voltage -50 -50 la = -1pA, Vos = 0 Vasion Gate-Source Cutoff Voltage -~4 6 Vv Vos = 15V, Ip = 0.5nA 0.5 2 Vos = 15V, Ip = 50uA Vas Gate-Source Voltage - -1 -4 Vos = 18V, Ip = 200A loss Saturation Drain Current (Note 1) 0.5 25 2 10 mA | Vos = 15V, Ves =0 3-52N3821 / 2N3822 2N3821 /2N3822 ELECTRICAL CHARACTERISTICS (Continued) (Ta = 25C unless otherwise specified) calogic 2N3821 2N3822 SYMBOL PARAMETER UNITS TEST CONDITIONS MIN MAX MIN MAX gis Ce et) 1500 | 4500 | 3000 | 6500 f= 1kHz Common-Source Forward | is | Transadmittance
X2N3822. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Screened to MX level in reference to MIL-PRF-19500 JANTX level. TO-72 (TO-206AF) Package APPLICATIONS / BENEFITS * * Low-power transistor. Leaded metal TO-72 package. MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature Gate-Source Voltage Drain-Source Voltage Grain-Drain -Gate Voltage (1) Steady-State Power Dissipation @ TA = +25 C Gate Current Symbol Value TJ and TSTG V GSR V DS V DG PD I GF -55 to +200 50 50 50 300 10 Notes: 1. Derate linearly 1.7 mW/C for T A > +25 C. Unit o C V V V mW mA MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0260, Rev. 1 (120634) (c)2012 Microsemi Corporation Page 1 of 4 NJF6510 MECHANICAL and PACKAG