SPD02N60C3 SPU02N60C3 Preliminary data Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology Product Summary * Ultra low gate charge VDS @ Tjmax * Periodic avalanche rated RDS(on) * Extreme dv/dt rated ID * Ultra low effective capacitances P-TO251 650 V 3 1.8 A P-TO252 * 150 C operating temperature Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =0.9A, VDD =50V Avalanche energy, repetitive tAR limited by T
SPD02N60C3 SPU02N60C3 Final data Cool MOSTM Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 3 ID 1.8 A * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated P-TO251 P-TO252 * Extreme dv/dt rated * Ultra low effective capacitances Type SPD02N60C3 Package P-TO252 Ordering Code Q67040-S4420 Marking 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax I D puls 5.4 Avalanche energy, single pulse EAS 50 mJ I D = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.07 I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 1.8 A 20 V Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature T j , T stg -55... +150 C Page 1 2003-10-02 SPD02N60C3 SPU02N60C3 Final data Maximum Rati
SPD02N60C3 SPU02N60C3 Final data Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS(on) 3 ID 1.8 A Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated P-TO251 P-TO252 * Extreme dv/dt rated * Ultra low effective capacitances Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =0.9A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =1.8A, VDD =50V A V/ns IS =1.8A, VDS < VD
SPD02N60C3 SPU02N60C3 Preliminary data Cool MOSTM==Power Transistor COOLMOS Power Semiconductors Feature *=New revolutionary high voltage technology Product Summary * Ultra low gate charge VDS @ Tjmax *=Periodic avalanche rated RDS(on) * Extreme dv/dt rated ID *=Ultra low effective capacitances P-TO251 650 V 3 1.8 A P-TO252 *=Improved noise immunity *=150 C operating temperature Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage dynamic VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =0.9A, VD
SPD02N60C3 SPU02N60C3 Final data Cool MOSTM Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 3 ID 1.8 A * New revolutionary high voltage technology * Ultra low gate charge P-TO251 * Periodic avalanche rated P-TO252 * Extreme dv/dt rated * Ultra low effective capacitances Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, t p limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A Gate source voltage static VGS 20 V Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID=0.9A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=1.8A, VDD=50V Page 1 2003-07-01 SPD02N60C3 SPU02N60C3
SPD02N60C3 SPU02N60C3 Preliminary data Cool MOSTM==Power Transistor COOLMOS Power Semiconductors Feature *=New revolutionary high voltage technology Product Summary * Worldwide best R DS(on) in TO 220 * Ultra low gate charge VDS @ Tjmax *=Periodic avalanche rated ID 650 RDS(on) * Extreme dv/dt rated P-TO251 3 1.8 V m A P-TO252 *=Ultra low effective capacitances *=Improved noise immunity *=150 C operating temperature Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage dynamic VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature
SPD02N60C3 SPU02N60C3 Preliminary data Cool MOSTM==Power Transistor Feature *=New revolutionary high voltage technology Product Summary * Ultra low gate charge VDS @ Tjmax *=Periodic avalanche rated RDS(on) * Extreme dv/dt rated ID *=Ultra low effective capacitances P-TO251 650 V 3 1.8 A P-TO252 *=150 C operating temperature Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =0.9A, VDD =50V Avalanche energy, repetitive tAR limited by
SPD02N60C3 SPU02N60C3 Final data Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology Product Summary * Ultra low gate charge VDS @ Tjmax * Periodic avalanche rated RDS(on) * Extreme dv/dt rated ID * Ultra low effective capacitances P-TO251 650 V 3 1.8 A P-TO252 * 150 C operating temperature Type Package Ordering Code Marking SPD02N60C3 P-TO252 Q67040-S4420 02N60C3 SPU02N60C3 P-TO251 - 02N60C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 1.8 TC = 100 C 1.1 Pulsed drain current, tp limited by Tjmax ID puls 5.4 Avalanche energy, single pulse EAS 50 EAR 0.07 Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS 20 Gate source voltage AC (f >1Hz) VGS 30 Power dissipation, TC = 25C Ptot 25 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =0.9A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1
13947 SPD07N60C3BTMA1 DPAK 600 600 2.1 ... 3.9 7.3 SPD06N60C3 SP000307394 SPD06N60C3BTMA1 DPAK 600 750 2.1 ... 3.9 6.2 SPD04N60C3 SP000313944 SPD04N60C3BTMA1 DPAK 600 950 2.1 ... 3.9 4.5 SPD03N60C3 SP000308772 SPD03N60C3BTMA1 DPAK 600 1400 2.1 ... 3.9 3.2 SPD02N60C3 SP000308771 SPD02N60C3BTMA1 DPAK 600 3000 2.1 ... 3.9 1.8 SPD01N60C3 SP000307382 SPD01N60C3BTMA1 DPAK 600 6000 2.1 ... 3.9 0.8 SPI20N60C3 SP000014453 SPI20N60C3HKSA1 IPAK 600 190 2.1 ... 3.9 20.7 600V C3 Series u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u u SPI20N60C3 SP000681006 SPI20N60C3XKSA1 IPAK 600 190 2.1 ... 3.9 20.7 SPI15N60C3 SP000014528 SPI15N60C3HKSA1 IPAK 600 280 2.1 ... 3.9 15 SPI15N60C3 SP000680998 SPI15N60C3XKSA1 IPAK 600 280 2.1 ... 3.9 15 SPI11N60C3 SP000013522 SPI11N60C3HKSA1 IPAK 600 380 2.1 ... 3.9 11 SPI11N60C3 SP000680986 SPI11N60C3XKSA1 IPAK 600 380 2.1 ... 3.9 11 SPI07N60C3 SP000013521 SPI07N60C3HKSA1 IPAK 600 600 2.1 ... 3.9 7.3 SPI07N60C3 SP000680976 SPI07N60
3 IPB60R099CP IPB60R125CP IPB60R165CP SPB20N60C3 IPB60R199CP IPB60R250CP IPB60R299CP SPB11N60C3 IPB60R385CP IPB60R520CP IPB60R600CP SPB07N60C3 SPB04N60C3 SPB03N60C3 SPB02N60C3 IPD60R385CP IPD60R520CP IPD60R600CP SPD07N60C3 SPD06N60C3 SPD04N60C3 SPD03N60C3 SPD02N60C3 SPD01N60C3 IPI60R099CP IPI60R125CP IPI60R165CP SPI20N60C3 SPI20N60C3 IPI60R199CP SPI20N60CFD SPI20N60CFD SP000216312 SP000089316 SP000216317 SP000405856 SP000405884 SP000216303 SP000264431 SP000216301 SP000216299 SP000216296 SP000088490 SP000297368 SP000096439 SP000013520 SP000223256 SP000358140 SP000301161 SP000013519 SP000228365 SP000405868 SP000405892 SP000013518 SP000013533 SP000013517 SP000013516 SP000307381 SP000405852 SP000405878 SP000313947 SP000307394 SP000313944 SP000308772 SP000308771 SP000307382 SP000297356 SP000297355 SP000276736 SP000014453 SP000681006 SP000103248 SP000229995 SP000681008 SPA11N60C3XKSA1 IPA60R385CPXKSA1 SPA11N60CFDXKSA1 IPA60R520CPXKSA1 IPA60R600CPXKSA1 SPA07N60C3XKSA1 SPA07N60CFDXKSA1 SPA06N60C3XKSA1 SP
WHUE AR P- 63'1& : 3$5 V(BR)DSS 9 & +] f Tj Rev. 2.5 PDJH 804-07 63'1& 6381& 7\SFDSDFLWDQFHV 7\SCossVWRUHGHQHUJ\ & I VDS SDUDPHWHUV GS 9I 0+] (RVV f VDS S) - (RVV & &LVV &RVV &UVV 9 VDS 9 VDS 'HILQLWLRQRIGLRGHVVZLWFKLQJFKDUDFWHULVWLFV Rev. 2.5 PDJH 804-07 SPD02N60C3 SPU02N60C3 PG-TO-252-3-1 (D-PAK), PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) Rev. 2.5 Page 11 2008-04-07 SPD02N60C3 SPU02N60C3 PG-TO-251-3-1 (I-PAK), PG-TO-251-3-21 (I-PAK) Rev. 2.5 Page 12 2008-04-07 SPD02N60C3 SPU02N60C3 Rev. 2.5 PDJH3 804-07 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: SPU02N60C3 SPD02N60C3
Rev. 2.5 PDJH http://store.iiic.cc/ 804-07 63'1& 6381& 7\SFDSDFLWDQFHV 7\SCossVWRUHGHQHUJ\ & I VDS SDUDPHWHUV GS 9I 0+] (RVV f VDS S) - (RVV & &LVV &RVV &UVV 9 VDS 9 VDS 'HILQLWLRQRIGLRGHVVZLWFKLQJFKDUDFWHULVWLFV Rev. 2.5 PDJH http://store.iiic.cc/ 804-07 SPD02N60C3 SPU02N60C3 PG-TO-252-3-1 (D-PAK), PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) Rev. 2.5 Page 11 http://store.iiic.cc/ 2008-04-07 SPD02N60C3 SPU02N60C3 PG-TO-251-3-1 (I-PAK), PG-TO-251-3-21 (I-PAK) Rev. 2.5 Page 12 http://store.iiic.cc/ 2008-04-07 SPD02N60C3 SPU02N60C3 Rev. 2.5 PDJH3 http://store.iiic.cc/ 804-07
SPA04N60C3XKSA1 SPA03N60C3XKSA1 SPB20N60C3ATMA1 SPB11N60C3ATMA1 SPB07N60C3ATMA1 SPB04N60C3ATMA1 SPB03N60C3ATMA1 SPB02N60C3ATMA1 SPD07N60C3ATMA1 SPD07N60C3BTMA1 SPD06N60C3ATMA1 SPD06N60C3BTMA1 SPD04N60C3ATMA1 SPD04N60C3BTMA1 SPD03N60C3ATMA1 SPD03N60C3BTMA1 SPD02N60C3BTMA1 SPD01N60C3BTMA1 SPI20N60C3HKSA1 SPI20N60C3XKSA1 SPI15N60C3HKSA1 SPI15N60C3XKSA1 SPI11N60C3HKSA1 SPI11N60C3XKSA1 SPI07N60C3HKSA1 SPI07N60C3XKSA1 SPP24N60C3HKSA1 SPP24N60C3XKSA1 SPP20N60C3HKSA1 SPP20N60C3XKSA1 SPP15N60C3HKSA1 SPP15N60C3XKSA1 SPP11N60C3HKSA1 SPP11N60C3XKSA1 SPP07N60C3HKSA1 SPP07N60C3XKSA1 SPP06N60C3HKSA1 TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK IPAK IPAK IPAK IPAK IPAK IPAK IPAK IPAK TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 6
600 600 6.2 1.2 2 D -PAK 2 SPB03N60C3 IRFBC40L 600 6.2 1.2 I -PAK SPI07N60C3 IRFBC40S 600 6.2 1.2 D2-PAK SPB03N60C3 IRFBE20 800 1.8 6.5 TO-220 SPP02N80C3 IRFBE30 800 4.1 3 TO-220 SPP02N80C3 IRFD420 500 0.46 3 HEXDIP SPP02N60C3 IRFDC20 600 0.32 4.4 HEXDIP SPD02N60C3 IRFI820G 500 2.1 3 TO-220FP SPA04N60C3 IRFI830G 500 3.1 1.5 TO-220FP SPA04N60C3 IRFI840G 500 4.6 0.85 TO-220FP SPA04N60C3 IRFI840GLC 500 4.8 0.85 TO-220FP SPA04N60C3 IRFIB5N65A 650 5.1 0.93 TO-220FP SPA04N60C3 IRFIB6N60A 600 5.5 0.75 TO-220FP SPA07N60C3 IRFIB7N50A 500 6.6 0.52 TO-220FP SPA07N60C3 IRFIBC20G 600 1.7 4.4 TO-220FP SPA04N60C3 IRFIBC30G 600 2.5 2.2 TO-220FP SPA04N60C3 IRFIBC40G 600 3.5 1.2 TO-220FP SPA04N60C3 IRFIBC40GLC 600 4 1.2 TO-220FP SPA04N60C3 IRFIBE20G 800 1.4 6.5 TO-220FP SPP02N80C3 IRFIBE30G 800 2.1 3 TO-220FP SPP02N80C3 IRFP17N50L 500 16 0.28 TO-247 SPW20N60C3 IRFP22N50A 500 22 0.23 TO-247 SPW20N60C3 IRFP31N50L 500 31 0.15 TO-247 SPW20N60C3 IRFP32N50K 500 32 0.145 TO-247 SPW20N60C3 IRFP440 500 8.8 0.85 TO-247 SPP
WHUE AR P- 63'1& : 3$5 V(BR)DSS 9 & +] f Tj Rev. 2.5 PDJH 804-07 63'1& 6381& 7\SFDSDFLWDQFHV 7\SCossVWRUHGHQHUJ\ & I VDS SDUDPHWHUV GS 9I 0+] (RVV f VDS S) - (RVV & &LVV &RVV &UVV 9 VDS 9 VDS 'HILQLWLRQRIGLRGHVVZLWFKLQJFKDUDFWHULVWLFV Rev. 2.5 PDJH 804-07 SPD02N60C3 SPU02N60C3 PG-TO-252-3-1 (D-PAK), PG-TO-252-3-11 (D-PAK), PG-TO-252-3-21 (D-PAK) Rev. 2.5 Page 11 2008-04-07 SPD02N60C3 SPU02N60C3 PG-TO-251-3-1 (I-PAK), PG-TO-251-3-21 (I-PAK) Rev. 2.5 Page 12 2008-04-07 SPD02N60C3 SPU02N60C3 Rev. 2.5 PDJH3 804-07