MRF967
N-Channel UHF-Microwave MOSFET

From Various

@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)10m
@Temp (°C) (Test Condition)25
@V(DD) (V) (Test Condition)5.0
@V(DS) (V) (Test Condition)5.0
C(iss) Max. (F)450f
I(D) Abs. Drain Current (A)60m
I(DSS) Max. (A)80m
I(DSS) Min. (A)30m
Noise Figure Max. (dB)1.5
P(D) Max.(W) Power Dissipation350m
PackageMicro-X
Power Gain Min. (dB)13
Semiconductor MaterialSilicon
V(BR)DSS (V)10
V(BR)GSS (V)-8.0
V(GS)off Max. (V)-4.5
g(fs) Max, (S) Trans. conduct,20m
g(fs) Min. (S) Trans. conduct.14m

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