MRF967 N-Channel UHF-Microwave MOSFET
From Various
@Freq. (Hz) (Test Condition) | 1.0M |
@I(D) (A) (Test Condition) | 10m |
@Temp (°C) (Test Condition) | 25 |
@V(DD) (V) (Test Condition) | 5.0 |
@V(DS) (V) (Test Condition) | 5.0 |
C(iss) Max. (F) | 450f |
I(D) Abs. Drain Current (A) | 60m |
I(DSS) Max. (A) | 80m |
I(DSS) Min. (A) | 30m |
Noise Figure Max. (dB) | 1.5 |
P(D) Max.(W) Power Dissipation | 350m |
Package | Micro-X |
Power Gain Min. (dB) | 13 |
Semiconductor Material | Silicon |
V(BR)DSS (V) | 10 |
V(BR)GSS (V) | -8.0 |
V(GS)off Max. (V) | -4.5 |
g(fs) Max, (S) Trans. conduct, | 20m |
g(fs) Min. (S) Trans. conduct. | 14m |