IRF450EB 12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
From International Rectifier
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 8 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 500 V |
Drain Current-Max (ID) | 12 A |
Drain-source On Resistance-Max | 0.5000 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 48 A |
Terminal Finish | TIN LEAD |
Terminal Form | PIN/PEG |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |