BSC019N04NSG 29 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 295 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
China RoHS Compliant | Yes |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (ID) | 29 A |
Drain-source On Resistance-Max | 0.0019 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Mfr Package Description | GREEN, PLASTIC, TDSON-8 |
Number of Elements | 1 |
Number of Terminals | 5 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 400 A |
Surface Mount | Yes |
Terminal Finish | MATTE TIN |
Terminal Form | FLAT |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |