BSC019N04NSG
29 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET

From Infineon Technologies AG

StatusACTIVE
Avalanche Energy Rating (Eas)295 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min40 V
Drain Current-Max (ID)29 A
Drain-source On Resistance-Max0.0019 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionGREEN, PLASTIC, TDSON-8
Number of Elements1
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)400 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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