Product Datasheet Search Results:

IRFD110.pdf19 Pages, 625 KB, Original
IRFD110
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRFD110.pdf2 Pages, 120 KB, Scan
IRFD110
General Electric
Power Transistor Data Book 1985
IRFD110.pdf5 Pages, 173 KB, Scan
IRFD110
Harris Semiconductor
Power MOSFET Data Book 1990
IRFD110R.pdf5 Pages, 174 KB, Scan
IRFD110R
Harris Semiconductor
Power MOSFET Data Book 1990
IRFD110.pdf6 Pages, 53 KB, Original
IRFD110
Intersil Corporation
1A, 100V, 0.600 ?, N-Channel Power MOSFET
IRFD110.pdf1 Pages, 36 KB, Original
IRFD110PBF.pdf8 Pages, 1777 KB, Original
IRFD110R.pdf1 Pages, 41 KB, Original
IRFD110R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRFD110.pdf2 Pages, 114 KB, Scan
IRFD110
N/a
FET Data Book
IRFD110R.pdf1 Pages, 85 KB, Scan
IRFD110R
N/a
Shortform Datasheet & Cross References Data
IRFD110.pdf67 Pages, 163 KB, Original
IRFD110
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

Siliconix_vishay/IRFD110PBF
804 Bytes - 20:24:45, 29 September 2024
Various/IRFD110R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"1.2","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"25n","r(DS)on Max. (Ohms)":"600m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"8.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"800m","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"800m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250v...
1268 Bytes - 20:24:45, 29 September 2024
Vishay.com/IRFD110
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Ta)","Gate Charge (Qg) @ Vgs":"8.3nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"540 mOhm @ 600mA, 10V","Datasheets":"IRFD110","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vdss)":"100V","PCN Obsolescence\/ EOL":"SIL-018-2015-Rev-0 20\/May\/20...
1744 Bytes - 20:24:45, 29 September 2024
Vishay.com/IRFD110PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package \/ Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1A (Ta)","Gate Charge (Qg) @ Vgs":"8.3nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"540 mOhm @ 600mA, 10V","Datasheets":"IRFD110","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"100","Drain to Source Voltage (Vdss)...
1753 Bytes - 20:24:45, 29 September 2024
Vishay_pcs/IRFD110PBF
{"Category":"Power MOSFET","Dimensions":"6.29 x 5 x 3.37 mm","Maximum Continuous Drain Current":"1 A","Width":"5 mm","Maximum Drain Source Voltage":"100 V","Package Type":"HVMDIP","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 8.3 nC @ 10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"6.9 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"180 pF @ 25 V","Length":"6....
1929 Bytes - 20:24:45, 29 September 2024